PART |
Description |
Maker |
KMM53232000CK KMM53232000CKG |
32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
|
Samsung semiconductor
|
M372F3200DJ3-C |
32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V 32M × 72配置,带ECC DRAM的内存使6Mx4K
|
Samsung Semiconductor Co., Ltd.
|
KMM53616004BKG KMM53616004BK |
16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
KMM53616000BKG KMM53616000BK |
16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
KMM53216000CK KMM53216000CKG |
16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V 1,600 × 32的DRAM上海药物研究所利用16Mx4K的刷新,5V
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
KMM53616004CK |
16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V 1,600 × 36的DRAM上海药物研究所利用16Mx4
|
Samsung Semiconductor Co., Ltd.
|
M374F3200DJ1-C M374F3280DJ1-C |
32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V
|
Samsung semiconductor
|
KMM372F3200BK3 |
32M x 72 DRAM DIMM(32M x 72 动RAM模块) 32M × 72配置的DRAM内存2M × 72配置动态内存模块)
|
Samsung Semiconductor Co., Ltd.
|
KMM374F3280BK |
32M x 72 DRAM DIMM(32M x 72 动RAM模块) 32M × 72配置的DRAM内存2M × 72配置动态内存模块)
|
Samsung Semiconductor Co., Ltd.
|
K4M511533E-YPC K4M511533E K4M511533E-C K4M511533E- |
Mobile-SDRAM 移动SDRAM 32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 32M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
N80 K4S511633CNBSP K4S511633C-YL_N80 K4S511633C K4 |
32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 32M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 32Mx16 Mobile SDRAM 54CSP 1/CS 32Mx16移动SDRAM 54CSP 1/CS
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
KMM5321204C2W |
1M x 32 DRAM SIMM
|
Samsung Semiconductor
|